Compact modeling of MOSFETs channel noise for low-noise RF ICs design

被引：0

作者：

Lu, Zhi-Qiang ^{[1
]}

Lai, Feng-Chang ^{[1
]}

机构：

[1] Harbin Inst Technol, Ctr Microelect, Harbin, Heilongjiang, Peoples R China

来源：

2006 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS | 2006年

关键词：

channel noise; compact modeling; MOSFET; short-channel effects; noise parameters;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A compact modeling of MOSFETs channel noise is proposed by considering short-channel effects of deep submicron MOSFETs, such as mobility degradation, hot carrier, bulk charge and channel length modulation effects. The model is only dependent on bias, size and technology of MOSFETs, and hence is suitable for low-noise RF ICs design. Noise parameters of MOSFETs are achieved and good agreement between calculated and measured results is demonstrated.

引用

页码：41 / +

页数：2

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