Hot-carrier reliability in submicrometer LDMOS transistors

被引：41

作者：

Versari, R ^{[1
]}

Pieracci, A ^{[1
]}

Manzini, S ^{[1
]}

Contiero, C ^{[1
]}

Ricco, B ^{[1
]}

机构：

[1] Univ Bologna, Dipartimento Elettron Informat & Sistemist, I-40136 Bologna, Italy

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650402

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper provides a physical basis for the experimentally determined hot-electron-limited safe operating area of submicrometer LDMOS transistors under static bias conditions. The physical interpretation of the device behavior is based on the analysis of the bias-dependent Gate and Substrate currents and of the relative induced degradation.

引用

页码：371 / 374

页数：4