High-resolution, resistless patterning of indium-tin-oxide thin films using excimer laser projection annealing process

被引：20

作者：

Chae, Junghun ^{[1
]}

Jang, Linus ^{[2
]}

Jain, Kanti ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

来源：

MATERIALS LETTERS | 2010年 / 64卷 / 08期

基金：

美国国家科学基金会;

关键词：

ITO; Excimer laser crystallization; High-resolution; Large-area patterning; CRYSTALLIZATION;

D O I：

10.1016/j.matlet.2010.01.068

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-resolution, large-area patterning of indium-tin-oxide (ITO) thin film was demonstrated using an excimer laser projection crystallization process. After amorphous ITO (a-ITO) was deposited on a glass substrate, the a-ITO was selectively crystallized using an excimer laser scanning projection exposure system. Following the selective crystallization, the substrate was dipped in an etchant for an optimized time, resulting in formation of high-resolution patterns of polycrystalline ITO (p-ITO) on the substrate because the a-ITO has higher etch rate than the p-ITO. The p-ITO patterns were clean and sharp, and the pattern quality was suitable for production applications in the microelectronics industry. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：948 / 950

页数：3

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