On the Capacity of Write-Once Memories

被引:5
|
作者
Horovitz, Michal [1 ]
Yaakobi, Eitan [1 ]
机构
[1] Technion Israel Inst Technol, Dept Comp Sci, IL-32000 Haifa, Israel
基金
以色列科学基金会;
关键词
Coding theory; flash memories; write-once memory (WOM)-codes; multi-level memories; capacity region; maximum sum-rate; z-channel; erasure channel; asymmetric errors; CODES;
D O I
10.1109/TIT.2017.2689034
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Write-once memory (WOM) is a storage device consisting of q-ary cells that can only increase their value. A WOM code is a coding scheme that allows writing multiple times to the memory without decreasing the levels of the cells. In the conventional model, it is assumed that the encoder can read the memory state before encoding, while the decoder reads only the memory state after encoding. However, there are three more models in this setup, which depend on whether the encoder and the decoder are informed or uninformed with the previous state of the memory. These four models were first introduced by Wolf et al., where they extensively studied the WOM capacity in these models for the binary case. In the non-binary setup, only the model, in which the encoder is informed and the decoder is not, was studied by Fu and Vinck. In this paper, we first present constructions of WOM codes in the models where the encoder is uninformed with the memory state (that is, the encoder cannot read the memory prior to encoding). We then study the capacity regions and maximum sum-rates of non-binary WOM codes for all four models. We extend the results by Wolf et al. and show that the capacity regions for the models in which the encoder is informed and the decoder is informed or uninformed in both the epsilon-error and the zero-error cases are all identical. We also find the epsilon-error capacity region; in this case, the encoder is uninformed and the decoder is informed and show that, in contrary to the binary case, it is a proper subset of the capacity region in the first two models. Several more results on the maximum sum-rate are presented as well.
引用
收藏
页码:5124 / 5137
页数:14
相关论文
共 50 条
  • [1] GENERALIZED WRITE-ONCE MEMORIES
    FIAT, A
    SHAMIR, A
    IEEE TRANSACTIONS ON INFORMATION THEORY, 1984, 30 (03) : 471 - 480
  • [2] Codes for Write-Once Memories
    Yaakobi, Eitan
    Kayser, Scott
    Siegel, Paul H.
    Vardy, Alexander
    Wolf, Jack Keil
    IEEE TRANSACTIONS ON INFORMATION THEORY, 2012, 58 (09) : 5985 - 5999
  • [3] WRITE-ONCE OR NOT WRITE-ONCE
    HOY, JJ
    OPTICAL INFORMATION SYSTEMS, 1991, 11 (01): : 24 - 25
  • [4] AUTHORIZED WRITING FOR WRITE-ONCE MEMORIES
    GODLEWSKI, P
    COHEN, GD
    LECTURE NOTES IN COMPUTER SCIENCE, 1986, 219 : 111 - 115
  • [5] LINEAR BINARY CODE FOR WRITE-ONCE MEMORIES
    COHEN, GD
    GODLEWSKI, P
    MERKX, F
    IEEE TRANSACTIONS ON INFORMATION THEORY, 1986, 32 (05) : 697 - 700
  • [6] Polar Coding for Noisy Write-Once Memories
    Gad, Eyal En
    Li, Yue
    Kliewer, Joerg
    Langberg, Michael
    Jiang, Anxiao
    Bruck, Jehoshua
    2014 IEEE INTERNATIONAL SYMPOSIUM ON INFORMATION THEORY (ISIT), 2014, : 1638 - 1642
  • [7] Position Modulation Code for Rewriting Write-Once Memories
    Wu, Yunnan
    Jiang, Anxiao
    IEEE TRANSACTIONS ON INFORMATION THEORY, 2011, 57 (06) : 3692 - 3697
  • [8] Spatially-Coupled Codes for Write-Once Memories
    Kumar, Santhosh
    Vem, Avinash
    Narayanan, Krishna
    Pfister, Henry D.
    2015 53RD ANNUAL ALLERTON CONFERENCE ON COMMUNICATION, CONTROL, AND COMPUTING (ALLERTON), 2015, : 125 - 131
  • [9] Joint Rewriting and Error Correction in Write-Once Memories
    Jiang, Anxiao
    Li, Yue
    Gad, Eyal En
    Langberg, Michael
    Bruck, Jehoshua
    2013 IEEE INTERNATIONAL SYMPOSIUM ON INFORMATION THEORY PROCEEDINGS (ISIT), 2013, : 1067 - +
  • [10] On the Capacity of Non-Binary Write-Once Memory
    Horovitz, Michal
    Yaakobi, Eitan
    2016 IEEE INTERNATIONAL SYMPOSIUM ON INFORMATION THEORY, 2016, : 945 - 949