The hydrostatic pressure and temperature effects on hydrogenic impurity binding energies in GaAs/InxGa1-xAs/GaAs square quantum well

被引：30

作者：

Baser, P. ^{[1
]}

Altuntas, I. ^{[2
]}

Elagoz, S. ^{[2
]}

机构：

[1] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey

[2] Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 92卷

关键词：

Donor impurity binding energy; Quantum-well; Hydrostatic pressure; Temperature effect; MOLECULAR-BEAM EPITAXY; INDIUM SEGREGATION; FIELDS; GAIN;

D O I：

10.1016/j.spmi.2015.12.010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have calculated the ground state binding energy using variational methods and the effective mass approximation for the hydrogenic impurity in square quantum well structure made up of GaAs/InGaAs/GaAs epilayers under the action of hydrostatic pressure and temperature for different well widths and barrier heights. The effects of the variation of hydrostatic pressure and temperature can be summarized as follows; impurity binding energy is a negligibly decreasing function of temperature for fixed pressure and is an increasing function of pressure for fixed temperature. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：210 / 216

页数：7

共 25 条

[1]

Adachi S., 2005, Properties of Group-IV, III-V and II-VI Semiconductors

[2] Linear and nonlinear optical absorption coefficients in GaAs/Ga1-xAlxAs concentric double quantum rings: Effects of hydrostatic pressure and aluminum concentration [J].