Forum on Materials and Interfaces for Next-Generation Thin-Film Transistors

被引:1
作者
Schanze, Kirk S.
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D O I
10.1021/acsami.8b12147
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:25833 / 25833
页数:1
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