QM/QM Approach to Model Energy Disorder in Amorphous Organic Semiconductors

被引:34
作者
Friederich, Pascal [1 ]
Meded, Velimir [1 ]
Symalla, Franz [1 ]
Elstner, Marcus [2 ]
Wenzel, Wolfgang [1 ]
机构
[1] Karlsruhe Inst Technol INT, Inst Nanotechnol INT, D-76344 Eggenstein Leopoldshafen, Germany
[2] Karlsruhe Inst Technol, Inst Phys Chem, D-76131 Karlsruhe, Germany
关键词
AUXILIARY BASIS-SETS; CHARGE-TRANSPORT; HOLE TRANSPORT; ELECTRONIC-PROPERTIES; EFFICIENT GENERATION; MOLECULAR MATERIALS; AM1-BCC MODEL; DENSITY; SIMULATIONS; CHEMISTRY;
D O I
10.1021/ct501023n
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
It is an outstanding challenge to model the electronic properties of organic amorphous materials utilized in organic electronics. Computation of the charge carrier mobility is a challenging problem as it requires integration of morphological and electronic degrees of freedom in a coherent methodology and depends strongly on the distribution of polaron energies in the system. Here we represent a QM/QM model to compute the polaron energies combining density functional methods for molecules in the vicinity of the polaron with computationally efficient density functional based tight binding methods in the rest of the environment. For seven widely used amorphous organic semiconductor materials, we show that the calculations are accelerated up to 1 order of magnitude without any loss in accuracy. Considering that the quantum chemical step is the efficiency bottleneck of a workflow to model the carrier mobility, these results are an important step toward accurate and efficient disordered organic semiconductors simulations, a prerequisite for accelerated materials screening and consequent component optimization in the organic electronics industry.
引用
收藏
页码:560 / 567
页数:8
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