Fast intrinsic emissions of wide-gap oxides under electron irradiation

被引:5
作者
Lushchik, A
Savikhin, F
Tokbergenov, I
机构
[1] Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia
[2] Almaty State Univ, Alma Ata 480100, Kazakhstan
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2003年 / 158卷 / 1-6期
关键词
fast intrinsic luminescence; wide-gap oxides;
D O I
10.1080/1042015021000052223
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
The emission spectra have been measured in the range of 1.6-9.0 eV under irradiation of wide-gap oxides by single electron pulses (3 ns, 300 kV), A fast (tau < 3 ns) continuous and temperature-independent emission, connected mainly with the transitions of hot holes between the levels of the valence band of oxides, can be separated in these spectra at 300-600 K, when the inertial emissions (5-7 eV) of localized excitations undergo a strong thermal quenching. It is suggested that a drastic decrease of the intensity of this so-called hole intraband luminescence (IBL) in a short-wavelength spectral region is caused by the lowering of the density of states at the edges of the valence band and, therefore, supplies information on the width of an anion valence band E-v. The drastic decrease of the IBL, intensity takes place at 6.4-8.6 eV in BaMgAl10O17, SrAl2O4, MgAl4O7, MgO and BeO, that agrees satisfactorily with the values of E-v in these systems obtained by other methods.
引用
收藏
页码:305 / 308
页数:4
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