High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate

被引：44

作者：

Huang, Hung-Wen ^{[1
]}

Huang, Jhi-Kai ^{[1
,2
]}

Kuo, Shou-Yi ^{[3
]}

Lee, Kang-Yuan ^{[2
]}

Kuo, Hao-Chung ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan

[2] Unilite Corp, Miaoli 350, Taiwan

[3] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 26期

关键词：

dislocations; gallium compounds; III-V semiconductors; light emitting diodes; nanolithography; reflectivity; transmission electron microscopy; wide band gap semiconductors;

D O I：

10.1063/1.3456385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, GaN-based LEDs with a nanoscale patterned sapphire substrate (NPSS) and a SiO2 photonic quasicrystal (PQC) structure on an n-GaN layer using nanoimprint lithography are fabricated and investigated. The light output power of LED with a NPSS and a SiO2 PQC structure on an n-GaN layer was 48% greater than that of conventional LED. Strong enhancement in output power is attributed to better epitaxial quality and higher reflectance resulted from NPSS and PQC structures. Transmission electron microscopy images reveal that threading dislocations are blocked or bended in the vicinities of NPSS layer. These results provide promising potential to increase output power for commercial light emitting devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456385]

引用

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