Boron compensation of 6H silicon carbide

被引：9
|
作者：
Mazzola, MS
Saddow, SE
Schoner, A
机构：
[1] Mississippi State Univ, Dept Elect & Comp Engn, Mississippi State, MS 39762 USA
[2] Ind Microelect Ctr, S-16425 Stockholm, Sweden
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
boron doping; solid source doping; epilayer; compensation;
D O I：
10.4028/www.scientific.net/MSF.264-268.119
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Experimental results are reported for boron-doping 6H silicon carbide epitaxial layers from a solid boron-nitride source. Boron doping concentrations :From more than 10(18) cm(-3) to less than 10(15) cm(-3) are observed. Doping concentrations are correlated with the proximity of the boron-nitride solid source to the heat source controlling the temperature of the boron nitride during CVD growth of the 6H SiC. Donor codoping, most likely from nitrogen, is also observed, in some cases leading to substantial compensation.
引用
收藏
页码：119 / 122
页数：4
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