Hydrogen and inert species in solid phase epitaxy

被引：11

作者：

Lieten, R. R. ^{[1
,2
]}

Degroote, S. ^{[2
]}

Clemente, F. ^{[2
]}

Leys, M. ^{[2
]}

Borghs, G. ^{[2
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[2] IMEC, B-3001 Leuven, Belgium

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 05期

关键词：

adsorption; amorphous semiconductors; crystallisation; elemental semiconductors; germanium; noncrystalline structure; semiconductor epitaxial layers; semiconductor growth; solid phase epitaxial growth; vacuum deposited coatings; vacuum deposition; THIN-FILMS; GE GROWTH; SI; QUALITY; SURFACES; SI(100);

D O I：

10.1063/1.3293453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation of hydrogen during deposition of amorphous germanium can influence solid phase epitaxy in many ways. We show that Ge-H bonds are not important during the crystallization process. However, atomic hydrogen is important during deposition to obtain a highly disordered layer. We have found that highly disordered layers can also be obtained when using a beam of inert gas species during ultrahigh vacuum deposition. These inert species effectively increase the disorder of the layer by limiting the surface mobility of adsorbed germanium atoms. In this way subsequent solid phase epitaxy can be improved significantly.

引用

页数：3

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