Single, double, and triple quantum dots in Ge/Si nanowires

被引:32
作者
Froning, F. N. M. [1 ]
Rehmann, M. K. [1 ]
Ridderbos, J. [2 ]
Brauns, M. [2 ]
Zwanenburg, F. A. [2 ]
Li, A. [3 ]
Bakkers, E. P. A. M. [3 ,4 ,5 ]
Zumbuhl, D. M. [1 ]
Braakman, F. R. [1 ]
机构
[1] Univ Basel, Dept Phys, Klingelbergstr 82, CH-4056 Basel, Switzerland
[2] Univ Twente, MESA Inst Nanotechnol, NanoElect Grp, POB 217, NL-7500 AE Enschede, Netherlands
[3] Eindhoven Univ Technol, Dept Appl Phys, POB 513, NL-5600 MB Eindhoven, Netherlands
[4] Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands
[5] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
基金
瑞士国家科学基金会;
关键词
COMPUTATION;
D O I
10.1063/1.5042501
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report highly tunable control of holes in Ge/Si core/shell nanowires. We demonstrate the ability to create single quantum dots of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size, we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration, we observe Pauli spin blockade. These results open the way to perform hole spin qubit experiments in these devices. Published by AIP Publishing.
引用
收藏
页数:5
相关论文
共 33 条
[1]   Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot [J].
Biesinger, D. E. F. ;
Scheller, C. P. ;
Braunecker, B. ;
Zimmerman, J. ;
Gossard, A. C. ;
Zumbuehl, D. M. .
PHYSICAL REVIEW LETTERS, 2015, 115 (10)
[2]   Few-electron quantum dots in nanowires [J].
Bjork, MT ;
Thelander, C ;
Hansen, AE ;
Jensen, LE ;
Larsson, MW ;
Wallenberg, LR ;
Samuelson, L .
NANO LETTERS, 2004, 4 (09) :1621-1625
[3]   Highly tuneable hole quantum dots in Ge-Si core-shell nanowires [J].
Brauns, Matthias ;
Ridderbos, Joost ;
Li, Ang ;
van der Wiel, Wilfred G. ;
Bakkers, Erik P. A. M. ;
Zwanenburg, Floris A. .
APPLIED PHYSICS LETTERS, 2016, 109 (14)
[4]   Anisotropic Pauli spin blockade in hole quantum dots [J].
Brauns, Matthias ;
Ridderbos, Joost ;
Li, Ang ;
Bakkers, Erik P. A. M. ;
van der Wiel, Wilfred G. ;
Zwanenburg, Floris A. .
PHYSICAL REVIEW B, 2016, 94 (04)
[5]   Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots [J].
Brauns, Matthias ;
Ridderbos, Joost ;
Li, Ang ;
Bakkers, Erik P. A. M. ;
Zwanenburg, Floris A. .
PHYSICAL REVIEW B, 2016, 93 (12)
[6]  
Camcnzind A. C., NAT COMM
[7]   Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires [J].
Conesa-Boj, S. ;
Li, A. ;
Koelling, S. ;
Brauns, M. ;
Ridderbos, J. ;
Nguyen, T. T. ;
Verheijen, M. A. ;
Koenraad, P. M. ;
Zwanenburg, F. A. ;
Bakkers, E. P. A. M. .
NANO LETTERS, 2017, 17 (04) :2259-2264
[8]   Universal quantum computation with the exchange interaction [J].
DiVincenzo, DP ;
Bacon, D ;
Kempe, J ;
Burkard, G ;
Whaley, KB .
NATURE, 2000, 408 (6810) :339-342
[9]   Resonant tunnelling features in quantum dots [J].
Escott, C. C. ;
Zwanenburg, F. A. ;
Morello, A. .
NANOTECHNOLOGY, 2010, 21 (27)
[10]   Three-dimensional transport diagram of a triple quantum dot [J].
Granger, G. ;
Gaudreau, L. ;
Kam, A. ;
Pioro-Ladriere, M. ;
Studenikin, S. A. ;
Wasilewski, Z. R. ;
Zawadzki, P. ;
Sachrajda, A. S. .
PHYSICAL REVIEW B, 2010, 82 (07)