Oscillating magnetoresistance of Co/Cu(111) films

被引：4
作者：
Zorchenko, VV [1 ]
Samophalov, VN [1 ]
Stetsenko, AN [1 ]
Chirkin, AN [1 ]
机构：
[1] Kharkov State Polytech Univ, Dept Met & Semicond Phys, UA-310002 Kharkov, Ukraine
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1998年 / 183卷 / 1-2期
关键词：
two-layer films; E-beam evaporation; magnetoresistance; oscillation;
D O I：
10.1016/S0304-8853(97)01059-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
For two-layer Co(134 Angstrom)/Cu(111) films on mica, obtained by e-beam evaporation, room temperature giant oscillations of resistance and the magnetoresistance (MR) (highest MR ratio -8.9%) were discovered as functions of Cu film thickness (t(Cu)) in the range t(Cu) less than or equal to 230 Angstrom, where the Cu film had an island-type structure. The high MR ratio (greater than or equal to 1.5%) was preserved up to t(Cu) less than or equal to 850 Angstrom. The separation distances of the resistance and MR extrema are multiples of the length 6.25 Angstrom which is practically equal to the spatial [111] diagonal of Cu unit cell. The resistance and MR oscillations are caused by the ordered variations of the geometric characteristics of island Cu films, induced by changing of the contact resistance of Cu-Co interfaces. (C) 1998 Elsevier Science B.V. All rights reserved.
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页码：25 / 34
页数：10
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