Spatial distribution of electrical properties in GaN p-i-n rectifiers

被引：5
|
作者：
Polyakov, AY
Smirnov, NB
Govorkov, AV
Zhang, AP
Ren, F
Pearton, SJ
Chyi, JI
Nee, TE
Lee, CM
Chuo, CC
机构：
[1] Inst Rare Met, Moscow 109017, Russia
[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[4] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 09期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/S0038-1101(00)00111-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Scanning electron microscope studies using secondary electrons and electron beam induced current (EBIC) modes are reported For prototype p-i-n structures developed For high-power applications. It is observed that the diffusion length values in such devices are of the order of 0.5 0.8 mu m and show considerable variations along the p n junction plane as also is the case for the thickness of the space charge region near the p i interface. Unidentified defects manifesting themselves even at low applied reverse biases and giving rise to a strong bright contrast in EBIC images of the cleaved diodes have been also detected. Their surface density has been estimated to be not lower than 10(3) cm(-2). (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1591 / 1595
页数：5
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