Double heterostructure based on ZnO and MgxZn1-xO

被引：35

作者：

Ohtomo, A

Kawasaki, M

Koida, T

Koinuma, H

Sakurai, Y

Yoshida, Y

Sumiya, M

Fuke, S

Yasuda, T

Segawa, Y

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 226, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 226, Japan

[3] Sci & Technol Corp, CREST, Shinjuku 169, Japan

[4] Toyo Univ, Fac Engn, Kawagoe, Saitama 350, Japan

[5] Shizuoka Univ, Dept Elect & Elect Engn, Hamamatsu, Shizuoka 432, Japan

[6] Inst Phys & Chem Res, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 980, Japan

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

zinc oxide; double heterostructure; widegap semiconductor; MgxZn1-xO;

D O I：

10.4028/www.scientific.net/MSF.264-268.1463

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a widegap semiconductor, MgxZn1-xO, as a barrier layer for ultraviolet light emitting devices based on ZnO. MgxZn1-xO single layer films and double heterostructures of MgxZn1-xO / ZnO /MgxZn1-xO were fabricated by pulsed laser deposition on sapphire (0001) substrates. The: photoluminescence peak of MgxZn1-xO shifted from 3.36 eV (x=0) to 3.87 eV (x=0.25) with increasing x. Epitaxial double heterostructures were successfuly grown as veryfied by X-ray diffraction and secoundary ion mass spectrometry. Clear exciton emission in double heterostructure indicates that this alloy system is promising for the light emitting devices.

引用

页码：1463 / 1466

页数：4

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