SIMULTANEOUS DUAL-WAVELENGTH GENERATION FROM VERTICAL EXTERNAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR LASERS

被引：0

作者：

Ranta, S. ^{[1
]}

Leinonen, T. ^{[1
]}

Harkonen, A. ^{[1
]}

Laakso, A. ^{[1
]}

Morozov, Y. ^{[2
]}

Pessa, M. ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FI-33101 Tampere, Finland

[2] Russian Acad Sci, Inst Radioengn & Elect, Saratov Branch, Saratov 410019, Russia

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2010年 / 50卷 / 01期

基金：

芬兰科学院;

关键词：

vertical external-cavity surface-emitting lasers; resonant periodic gain structure; semiconductor lasers; QUANTUM-WELLS; HIGH-POWER; FREQUENCY; EMISSION;

D O I：

10.3952/lithjphys.50104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate dual-wavelength emission from optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) with two different gain mirror designs. The first gain mirror design (Si) generated an optical output power of 0.39 W at lambda(S) = 984 nm and 0.30 W at lambda(L) = 1042 nm. A VECSEL using the second gain mirror design (S2) generated a maximum optical output power of 0.75 W at lambda(S) = 966 nm and 1.38 W at lambda(L) = 1047 nm. VESCELs using either gain mirror design exhibited self-pulsating behaviour in the high output power regime. In the VECSEL using the Si gain mirror design, self-pulsation started beyond the lambda(S) output power of 140 mW and lambda(L) output power of 115 mW. The corresponding output power limits in the VECSEL using the S2 gain mirror were 300 mW for both wavelengths.

引用

页码：27 / 34

页数：8

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