InGaAsP/InP gain-levered tunable lasers

被引：0
|
作者：
Hutchinson, JM [1 ]
Johannson, LA [1 ]
Getty, JT [1 ]
Henness, JA [1 ]
Coldren, LA [1 ]
机构：
[1] Intel Corp, Strat Technol, Santa Clara, CA 95051 USA
来源：
2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST | 2004年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A tunable gain-levered laser is fabricated on an InGaAsP ridge waveguide, and demonstrates increased CW differential efficiency and sharp DC turn-on, with hysteretic characteristics. The devices can be directly modulated up to > 2.5 Gb/s.
引用
收藏
页码：145 / 146
页数：2
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