Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump-terahertz probe measurements

被引：132

作者：

Hebling, Janos ^{[1
,2
]}

Hoffmann, Matthias C. ^{[1
,3
]}

Hwang, Harold Y. ^{[1
]}

Yeh, Ka-Lo ^{[1
]}

Nelson, Keith A. ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

[2] Univ Pecs, Dept Expt Phys, H-7624 Pecs, Hungary

[3] Univ Hamburg, Max Planck Grp Struct Dynam, CFEL, Hamburg, Germany

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 03期

关键词：

INTERVALLEY SCATTERING; SEMICONDUCTORS; SPECTROSCOPY; GENERATION; PHOTOCONDUCTIVITY; TRANSPORT; DYNAMICS;

D O I：

10.1103/PhysRevB.81.035201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We compare the observed strong saturation of the free-carrier absorption in n-type semiconductors at 300 K in the terahertz (THz) frequency range when single-cycle pulses with intensities up to 150 MW/cm(2) are used. In the case of germanium, a small increase in the absorption occurs at intermediate THz pulse energies. The recovery of the free-carrier absorption was monitored by time-resolved THz pump-THz probe measurements. At short probe delay times, the frequency response of germanium cannot be fitted by the Drude model. We attribute these unique phenomena of Ge to dynamical overpopulation of the high mobility Gamma conduction-band valley.

引用

页数：5

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