A novel deep etching technology for Si and quartz materials

被引：14

作者：

Morikawa, Yasuhiro ^{[1
]}

Koidesawa, Tooru ^{[1
]}

Hayashi, Toshio ^{[1
]}

Suu, Koukou ^{[1
]}

机构：

[1] ULVAC Inc, Inst Semicond Technol, Susono, Sizuoka 4101231, Japan

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 12期

关键词：

plasma process and deposition; etching; NLD plasma; deep etching; silicon; quartz; MEMS;

D O I：

10.1016/j.tsf.2006.10.100

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A disadvantage of ICP type plasma etching method compared with CCP one is low selectivity to photo resist. So a novel etching method was developed to obtain high selectivity to photo resist by incorporating a sputtering method, in which a target was placed on the opposite side of the substrate. Satisfactory results were obtained for a continuous gas feeding treatment and also for a gas modulating treatment. (c) 2006 Elsevier B.V All rights reserved.

引用

页码：4918 / 4922

页数：5

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