Towards a general concentration quenching model of Bi3+ luminescence

被引：42

作者：

Awater, Roy H. P. ^{[1
]}

Dorenbos, Pieter ^{[1
]}

机构：

[1] Delft Univ Technol, Fac Appl Sci, Dept Radiat Sci & Technol, Luminescence Mat Res Grp FAME LMR, NL-2629 JB Delft, Netherlands

来源：

JOURNAL OF LUMINESCENCE | 2017年 / 188卷

关键词：

Bi-pairs; Quenching; Charge transfer; Bi2+; Bi3+; EMISSION;

D O I：

10.1016/j.jlumin.2017.05.011

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The vacuum referred binding energy of the electron in the Bi2+ ground state has been determined in 15 different compounds. This shows that the electron binding energy in the ground state of Bi2+ is at lower (more negative) energy compared to the electron binding energy in the excited state of Bi3+. This means that electron transfer from the excited state of one Bi3+ to a neighboring Bi3+, forming a Bi2 + -Bi4+ pair, acts as a quenching route for the Bi3+ emission. Electron back transfer in the Bi2 + Bi4+ pair is then suggested to be the origin for the frequently observed pair emission. This paper shows that vacuum referred electron binding energy diagrams can provide a unique physical insight in the properties of inorganic compounds.

引用

页码：487 / 489

页数：3

共 29 条

[1] Luminescence and charge carrier trapping in YPO4:Bi [J].