A review on GeTe thin film-based phase-change materials

被引：35
作者：
Singh, Kamaljit [1 ,2 ]
Kumari, Sudesh [1 ,2 ]
Singh, Harpreet [1 ,2 ]
Bala, Neeru [1 ,2 ]
Singh, Palwinder [3 ]
Kumar, Akshay [4 ]
Thakur, Anup [5 ]
机构：
[1] Punjabi Univ Patiala, Dept Basic & Appl Sci, Adv Mat Res Lab, Patiala 147002, Punjab, India
[2] Punjabi Univ Patiala, Dept Phys, Patiala 147002, Punjab, India
[3] Chungbuk Natl Univ, Dept Phys, Cheongju 28644, Chungbuk, South Korea
[4] Sri Guru Granth Sahib World Univ, Dept Nanotechnol, Fatehgarh Sahib 140407, Punjab, India
[5] Punjabi Univ Patiala, Dept Basic & Appl Sci, Adv Mat Res Lab, Patiala 147002, Punjab, India
来源：
APPLIED NANOSCIENCE | 2021年 / 13卷 / 1期
关键词：
Chalcogenide; Interface; Doping; Fabrication methods; Optical properties; Switching; ATOMIC LAYER DEPOSITION; HIGH THERMOELECTRIC PERFORMANCE; ULTRALOW THERMAL-CONDUCTIVITY; OPTICAL-PROPERTIES; CRYSTALLIZATION KINETICS; CHALCOGENIDE GLASSES; HIGH-DENSITY; SB-TE; GE2SB2TE5; TRANSITIONS;
D O I：
10.1007/s13204-021-01911-7
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Germanium telluride (GeTe) is a phase-change material (PCM) from chalcogenide family, which undergoes reversible transition between amorphous and crystalline phase when subjected to optical or electrical pulse. The fast structural reversibility poses GeTe as an ideal material for data storage devices. GeTe is one of the best candidates for non-volatile memory technologies because of its high speed, low power consumption, scalability, data retention, and storage capacity. In this review, we discuss the developments in GeTe PCM, and their working and effect of interface and doping to upgrade their performance for various technological applications.
引用
收藏
页码：95 / 110
页数：16
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