Overcoming the rise in local deposit resistance during electrophoretic deposition via suspension replenishing

被引:6
|
作者
Tiwari, Prabal [1 ]
Ferson, Noah D. [1 ]
Arnold, David P. [2 ]
Andrew, Jennifer S. [1 ]
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL USA
来源
FRONTIERS IN CHEMISTRY | 2022年 / 10卷
基金
美国国家科学基金会;
关键词
electrophoretic deposition kinetics; colloidal processing; scalable nanomanufacturing; materials assembly; alumina; EQUILIBRIUM LIMIT CURRENT; IONIC GRADIENTS; YTTRIUM SILICATE; PH LOCALIZATION; TOP-DOWN; ELECTRODE; MECHANISMS; KINETICS; NANOFABRICATION; FUNDAMENTALS;
D O I
10.3389/fchem.2022.970407
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Nanomaterials have unique properties, functionalities, and excellent performance, and as a result have gained significant interest across disciplines and industries. However, currently, there is a lack of techniques that can assemble as-synthesized nanomaterials in a scalable manner. Electrophoretic deposition (EPD) is a promising method for the scalable assembly of colloidally stable nanomaterials into thick films and arrays. In EPD, an electric field is used to assemble charged colloidal particles onto an oppositely charged substrate. However, in constant voltage EPD the deposition rate decreases with increasing deposition time, which has been attributed in part to the fact that the electric field in the suspension decreases with time. This decreasing electric field has been attributed to two probable causes, (i) increased resistance of the particle film and/or (ii) the growth of an ion-depletion region at the substrate. Here, to increase EPD yield and scalability we sought to distinguish between these two effects and found that the growth of the ion-depletion region plays the most significant role in the increase of the deposit resistance. Here, we also demonstrate a method to maintain constant deposit resistance in EPD by periodic replenishing of suspension, thereby improving EPD's scalability.
引用
收藏
页数:11
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