Lateral plasma etching enhanced on/off ratio in graphene nanoribbon field-effect transistor

被引：45

作者：

Sun, Jian ^{[1
]}

Iwasaki, Takuya ^{[1
]}

Muruganathan, Manoharan ^{[1
]}

Mizuta, Hiroshi ^{[1
,2
]}

机构：

[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi 9231211, Japan

[2] Univ Southampton, Fac Phys Sci & Engn, Nanoelect & Nanotechnol Res Grp, Southampton SO17 1BJ, Hants, England

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 03期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

LITHOGRAPHY;

D O I：

10.1063/1.4906609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Opening the transport gap in graphene by minimizing its width is highly desirable to achieve outstanding switching performance, i.e., the high on/off ratio, in its field effect transistors (FETs). In this letter, we propose a simple method to open a comparable transport gap in graphene by narrowing down it into graphene nanoribbon (GNR) via the conventional nanofabrication procedure. In the process, GNR capped with a 50-nm-wide hydrogen-silsesquioxane mask is trimmed down from the edges by lateral plasma etching. The on/off ratio of the FET device is dramatically enhanced by two orders of magnitude as etching duration increases. The large on/off ratios of similar to 47 and similar to 10(5) are achieved at room temperature and 5.4 K, respectively. The electrical measurement reveals a transport gap opening of similar to 145 meV in GNR, which corresponds to a resulting width of < 10 nm. (C) 2015 AIP Publishing LLC.

引用

页数：3