Temperature-independent ytterbium valence in YbGaGe

被引:5
|
作者
Doyle, B. P.
Carleschi, E.
Magnano, E.
Malvestuto, M.
Dee, A. A.
Wills, A. S.
Janssen, Y.
Canfield, P. C.
机构
[1] CNR, INFM, Lab Nazl TASC, I-34012 Basovizza, TS, Italy
[2] Univ Trieste, Dipartmento Fis, I-34127 Trieste, Italy
[3] Sincrotrone Trieste SCpA, I-34012 Basovizza, TS, Italy
[4] UCL, Dept Chem, London WC1H 0AJ, England
[5] Royal Inst Great Britain, Davy Faraday Res Lab, London W1S 4BS, England
[6] Inst Max Von Laue Paul Langevin, F-38042 Grenoble 9, France
[7] Iowa State Univ, Ames Lab, Ames, IA 50011 USA
来源
PHYSICAL REVIEW B | 2007年 / 75卷 / 23期
关键词
D O I
10.1103/PhysRevB.75.235109
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have determined the ytterbium valence as a function of temperature in the reported near-zero thermal expansion material YbGaGe using x-ray photoemission at various incident photon energies. The Yb 3d, 4d, and 4f levels, which directly yield the Yb valence, have been measured. Careful analysis enabled the clear separation of surface and bulk contributions. Resonant photoemission at the 4d-4f absorption edge was used to enhance the low contribution of the Yb(3+) component. Contrary to the initially proposed Yb valence transition, we find no change in the valence from room temperature down to 115 K.
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页数:8
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