Growth and physical properties of MOCVD-deposited hafnium oxide films and their properties on silicon

被引：0

作者：

Van Elshocht, S ^{[1
]}

Caymax, M ^{[1
]}

De Gendt, S ^{[1
]}

Conard, T ^{[1
]}

Pétry, J ^{[1
]}

Claes, M ^{[1
]}

Witters, T ^{[1
]}

Zhao, C ^{[1
]}

Brijs, B ^{[1
]}

Richard, O ^{[1
]}

Bender, H ^{[1
]}

Vandervorst, W ^{[1
]}

Carter, R ^{[1
]}

Kluth, J ^{[1
]}

Daté, L ^{[1
]}

Pique, D ^{[1
]}

Heyns, MM ^{[1
]}

机构：

[1] IMEC VZW, Heverlee, Belgium

来源：

NOVEL MATERIALS AND PROCESSES FOR ADVANCED CMOS | 2003年 / 745卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper discusses metal organic chemical vapor deposited (MOCVD) HfO2 layers using tetrakis(diethylamido)hafnium (TDEAH) as precursor. We have studied the influence of the starting surface and deposition temperature on the growth kinetics and physical properties of the HfO2 layers. Important characteristics such as crystalline state, density, and organic contamination in the layers were found to be dependent on these parameters. Typical for this deposition process is the formation of an interfacial layer underneath the high-k layer. Its composition and thickness, affecting scaling of the equivalent oxide thickness, are shown to be closely related to the HfO2 process parameters mentioned above. Finally, we will show electrical results for HfO2/polySi gate stacks indicating the effect for deposition temperature.

引用

页码：197 / 202

页数：6