Specific heat and magnetic susceptibility of CeNiSn doped with Rh

被引：6
作者：
Slebarski, A. [1 ,2 ,3 ]
Maple, M. B. [2 ,3 ]
Fijalkowski, M. [1 ]
Goraus, J. [1 ]
机构：
[1] Univ Silesia, Inst Phys, PL-40007 Katowice, Poland
[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[3] Univ Calif San Diego, Inst Pure & Appl Phys Sci, La Jolla, CA 92093 USA
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2010年 / 22卷 / 16期
关键词：
KONDO; STATES; GAP;
D O I：
10.1088/0953-8984/22/16/165601
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
CeNiSn is known as a semimetallic system with a small pseudogap at the Fermi energy. We investigate the effect of Rh doping on the Kondo insulator CeNiSn by means of measurements of ac magnetic susceptibility and specific heat. We show that the formation of the Kondo insulator narrow gap in CeNi1-xRhxSn is associated with disorder-induced f-electron localization. For doped CeNiSn with x <= 0.06, the electrical resistivity data follow an activation and variable range hopping behaviour at low T, consistent with weak disorder and localization, while C/T is large, which is not a common feature of Kondo insulators. For x > 0.06, the system is metallic and exhibits non-Fermi liquid behaviour with magnetic susceptibility chi similar to T-n with n similar to 0.4 and electrical resistivity rho similar to T.
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页数：6
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