Fast Detection of a Weak Signal by a Stochastic Resonance Induced by a Coherence Resonance in an Excitable GaAs/Al0.45Ga0.55As Superlattice

被引:33
作者
Shao, Zhengzheng [1 ]
Yin, Zhizhen [2 ]
Song, Helun [2 ]
Liu, Wei [2 ]
Li, Xiujian [1 ]
Zhu, Jubo [1 ]
Biermann, Klaus [3 ]
Bonilla, Luis L. [4 ,5 ]
Grahn, Holger T. [3 ]
Zhang, Yaohui [1 ,2 ]
机构
[1] Natl Univ Def Technol, Coll Liberal Arts & Sci, Changsha 410073, Hunan, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
[3] Leibniz Inst Forsch Verbund Berlin eV, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany
[4] Univ Carlos III Madrid, Gregorio Millan Inst Fluid Dynam Nanosci & Ind Ma, Leganes 28911, Spain
[5] Univ Carlos III Madrid, Dept Mat Sci & Engn & Chem Engn, Leganes 28911, Spain
基金
中国国家自然科学基金;
关键词
GAAS-ALAS SUPERLATTICES; SEMICONDUCTOR SUPERLATTICES; SELF-OSCILLATIONS; SYSTEM; NOISE;
D O I
10.1103/PhysRevLett.121.086806
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The effect of a coherence resonance is observed experimentally in a GaAs/Al0.45Ga0.55As superlattice under dc bias at room temperature, which is driven by noise. For an applied voltage, for which no current self-oscillations are observed, regular current self-oscillations with a frequency of about 82 MHz are induced by exceeding a certain noise amplitude. In addition, a novel kind of a stochastic resonance is identified, which is triggered by the coherence resonance. This stochastic resonance appears when the device is driven by an external ac signal with a frequency, which is relatively close to that of the regular current self-oscillations at the coherence resonance. The intrinsic oscillation mode in the coherence resonance is found to be phase locked by an extremely weak ac signal. It is demonstrated that an excitable superlattice device can be used for the fast detection of weak signals submerged in noise. These results are very well reproduced by results using numerical simulations based on a sequential resonant tunneling model of nonlinear electron transport in semiconductor superlattices.
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页数:5
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