Preparation of Y1-xYbxBa2Cu3O7-y superconducting films by chemical vapor deposition

被引:2
作者
Kim, YS [1 ]
Park, HH [1 ]
Kim, YS [1 ]
Shin, HS [1 ]
机构
[1] Chonbuk Natl Univ, Dept Chem Engn, Deokjin Gu, Chonju 561756, South Korea
关键词
CVD; superconductor; thin films; YBaCuO; YbBaCuO;
D O I
10.1007/BF02706863
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
High Te Y1-xYbxBa2Cu3O7-y films were prepared on SrTiO3(100) substrates by chemical vapor deposition method. Yb1Ba2Cu3O7-y films were obtained at higher oxygen partial pressure compared with Y1Ba2Cu3O7-y films at the same deposition temperature. Tc,o (R=0) decreased about 1.5 K when Y was fully substituted with Yb. The c-axis lattice parameter of Y1-xYbxBa2Cu3O7-y films also decreased as the amount of Yb(x) increased.
引用
收藏
页码:473 / 476
页数:4
相关论文
共 14 条
[1]   POSSIBLE HIGH-TC SUPERCONDUCTIVITY IN THE BA-LA-CU-O SYSTEM [J].
BEDNORZ, JG ;
MULLER, KA .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1986, 64 (02) :189-193
[2]   EVIDENCE FOR SUPERCONDUCTIVITY ABOVE 40 K IN THE LA-BA-CU-O COMPOUND SYSTEM [J].
CHU, CW ;
HOR, PH ;
MENG, RL ;
GAO, L ;
HUANG, ZJ ;
WANG, YQ .
PHYSICAL REVIEW LETTERS, 1987, 58 (04) :405-407
[3]   Thin film fabrication of Bi-2(Sr,Ca)(2)CuOx phase at temperatures between 450 and 650 degrees C by plasma-assisted ion beam sputtering [J].
Endo, T ;
Yan, HD ;
Wakuta, M ;
Nishiku, H ;
Goto, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10A) :L1260-L1263
[4]  
HOU SY, 1993, APPL PHYS LETT, V62, P14
[5]  
KIM YS, 1994, THESIS CHONBUK NATL
[6]   PRESSURE-DEPENDENCE OF THE FORMATION OF YBACUO FILMS BY CHEMICAL VAPOR-DEPOSITION [J].
LEE, HG ;
PARK, JS ;
SHIN, HS ;
KIM, CY ;
KIM, CJ ;
WON, DY .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9A) :1977-1978
[7]  
LEE HG, 1993, APPL SUPERCOND, V1, P807
[8]   PREPARATION OF YBACUO FILM ON A MGO SUBSTRATE BY CHEMICAL VAPOR-DEPOSITION AT 650-DEGREES-C [J].
LEE, HG ;
PARK, SD ;
YANG, SW ;
SHIN, HS ;
WON, DY .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (2B) :L157-L159
[9]  
LI YQ, 1992, APPL PHYS LETT, V60, P11
[10]  
MAEDA H, 1988, JPN J APPL PHYS PT 2, V27, P2