Evaluation of ohmic contacts to p-type 6H-SiC created by C and Al coimplantation

被引：27
作者：
Zhao, JH
Tone, K
Weiner, SR
Caleca, MA
Du, HH
Withrow, SP
机构：
[1] RUTGERS STATE UNIV,MICROELECT RES LAB,PISCATAWAY,NJ 08855
[2] STEVENS INST TECHNOL,DEPT MAT SCI & ENGN,HOBOKEN,NJ 07030
[3] OAK RIDGE NATL LAB,OAK RIDGE,TN 37831
来源：
IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 08期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/55.605444
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comparative study of specific contact resistance and sheet resistivity of p-type 6H-SiC created by Al implantation only and by C and Al coimplantation into n(-)-6H-SiC epilayer grown on n(+)-6H-SiC has been performed to address the challenging issue of ohmic contacts to the anode of SIC thyristors and other thyristor-based advanced devices. Direct experimental evidence has been obtained which shows the obvious advantage of C and Al coimplantation in terms of contact resistance and sheet resistivity, Under our experimental conditions, it is found that the specific contact resistance can be reduced by three orders of magnitude and the sheet resistivity can be improved by a factor of 6 when C and Al are coimplanted into 6H-SiC.
引用
收藏
页码：375 / 377
页数：3
相关论文
共 13 条
[1]   CONTACT RESISTANCE MEASUREMENTS ON P-TYPE 6H-SIC [J].
CROFTON, J ;
BARNES, PA ;
WILLIAMS, JR ;
EDMOND, JA .
APPLIED PHYSICS LETTERS, 1993, 62 (04) :384-386
[2]  
Gardner J, 1996, J ELECTRON MATER, V25, P885, DOI 10.1007/BF02666654
[3]   NITROGEN-IMPLANTED SIC DIODES USING HIGH-TEMPERATURE IMPLANTATION [J].
GHEZZO, M ;
BROWN, DM ;
DOWNEY, E ;
KRETCHMER, J ;
HENNESSY, W ;
POLLA, DL ;
BAKHRU, H .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (12) :639-641
[4]  
GUDKOV VA, 1986, SOV PHYS SEMICOND+, V20, P105
[5]  
GUDKOV VA, 1984, SOV PHYS SEMICOND+, V18, P684
[6]   Aluminum and boron ion implantations into 6H-SiC epilayers [J].
Kimoto, T ;
Itoh, A ;
Matsunami, H ;
Nakata, T ;
Watanabe, M .
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) :879-884
[7]   LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].
MORKOC, H ;
STRITE, S ;
GAO, GB ;
LIN, ME ;
SVERDLOV, B ;
BURNS, M .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398
[8]   CURRENT CROWDING ON METAL CONTACTS TO PLANAR DEVICES [J].
MURRMANN, H ;
WIDMANN, D .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (12) :1022-&
[9]   PROGRESS IN SILICON-CARBIDE SEMICONDUCTOR ELECTRONICS TECHNOLOGY [J].
NEUDECK, PG .
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) :283-288
[10]   AL AND B ION-IMPLANTATIONS IN 6H-SIC AND 3C-SIC [J].
RAO, MV ;
GRIFFITHS, P ;
HOLLAND, OW ;
KELNER, G ;
FREITAS, JA ;
SIMONS, DS ;
CHI, PH ;
GHEZZO, M .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) :2479-2485
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