Topological Insulator GMR Straintronics for Low-Power Strain Sensors

被引:2
|
作者
Li, Lingzhi [1 ]
Wang, Yunhua [2 ,3 ]
Wang, Zongtan [1 ]
Liu, Yulan [1 ]
Wang, Biao [2 ,3 ]
机构
[1] Sun Yat Sen Univ, Sch Engn, Guangzhou 510006, Guangdong, Peoples R China
[2] Sun Yat Sen Univ, Sinofrench Inst Nucl Engn & Technol, Zhuhai 519082, Peoples R China
[3] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
topological insulator; giant magnetoresistance; magnetic switch; strain sensor; Fabry-Perot quantum resonances; SINGLE DIRAC CONE; SURFACE-STATES; TRANSPORT; SB2TE3;
D O I
10.1021/acsami.8b09664
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A quantum spin Hall insulator, i.e., topological insulator (TI), is a natural candidate for low-power electronics and spintronics because of its intrinsic dissipationless feature. Recent density functional theory and scanning tunneling spectroscopy experiments show that the mechanical strain allows dynamic, continuous, and reversible modulations of the topological surface states within the topological phase and hence opens prospects for TI straintronics. Here, we combine the mechanical strain and the giant magnetoresistance (GMR) of a ferromagnet-TI (FM-TI) junction to construct a novel TI GMR straintronics device. Such a FM-strained-FM-TI junction permits several energy spectral ranges for 100% GMR and a robust strain-controllable magnetic switch. Beyond the 100% GMR energy range, we observe a strain-modulated oscillating GMR, which is an alternative hallmark of the Fabry-Perot quantum interference of Dirac surface states. These strain-sensitive GMR responses indicate that FM-strained-FM-TI junctions are very favorable for practical applications for low-power nanoscale strain sensors.
引用
收藏
页码:28789 / 28795
页数:7
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