Influence of grain boundary interface on ionic conduction of (Zn1-x,Cox)O

被引:5
作者
Shawuti, Shalima [1 ]
Can, Musa Mutlu [1 ,2 ,3 ]
Gulgun, Mehmet Ali [1 ]
Kaneko, Satoru [4 ]
Endo, Tamio [5 ]
机构
[1] Sabanci Univ, Fac Engn & Nat Sci, TR-34359 Istanbul, Turkey
[2] Istanbul Univ, Fac Sci, Dept Phys, Renewable Energy & Oxide Hybride Syst Lab, TR-34314 Istanbul, Turkey
[3] Sabanci Univ, Nanotechnol Res & Applicat Ctr, TR-34956 Istanbul, Turkey
[4] Kanagawa Inst Ind Sci & Technol KISTE, Ebina, Kanagawa, Japan
[5] SIC, Sagamihara Surface Treatment Lab, Sagamihara, Kanagawa 2520243, Japan
关键词
Activation energy for ionic conduction; Oxide semiconductor of (Zn1-xCox)O system; Low temperature solid oxide fuel cells; FREQUENCY DIELECTRIC-RELAXATION; ZNO; SIZE; SPECTROSCOPY; CATHODE;
D O I
10.1016/j.compositesb.2017.04.020
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated the effect of Co atoms, doped into ZnO lattice, on ionic conductivity in the internal grains or through the grain boundaries. Influence of Co amount on the conductivity was associated with enhanced activation energies of the ionic conductivity through the grain boundaries. The change in activation energy implies that the mechanism of ionic conduction through the boundaries can be modified by the Co amount in the lattice. Three conductance mechanisms were identified by the Cole Cole plots in order to understand the relaxation mechanism and activation energies of ionic transportations. Newly formed activation energy, 395 meV, by increasing Co amount up to 10 mol% was attributed to the ionic conductivity through the enhanced (or increased) (Zn,Co)O/ZnO) interface at the grain boundaries. In addition, the activation energy was also enhanced by the electronic stability at high temperatures due to decrease in electronic conductivity in the Co-doped ZnO compared to that in undoped ZnO. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码:252 / 258
页数:7
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