A Compact Ku-Band SiGe Power Amplifier MMIC With On-Chip Active Biasing

被引：15
|
作者：
Noh, Y. S. [1 ]
Uhm, M. S. [1 ]
Yom, I. B. [1 ]
机构：
[1] Elect & Telecommun Res Inst, Satellite & Wireless Convergence Res Dept, Taejon 305700, South Korea
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2010年 / 20卷 / 06期
关键词：
Cascode; heterojunction bipolar transistor (HBT); Ku-band; power amplifier (PA); silicon germanium (SiGe);
D O I：
10.1109/LMWC.2010.2047530
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Ku-band power amplifier monolithic microwave integrated circuit (MMIC) with an output power density of 726 mW/mm(2) is demonstrated using 0.25 mu m SiGe BiCMOS technology. No inductor matching scheme is applied to minimize the MMIC size, but an active biasing topology is used to enhance the power-added efficiency (PAE) and linearity of the MMIC. The fabricated one-stage cascode power amplifier MMIC, including input/output matching and biasing circuits, has a compact size of 0.384 mm(2) (0.6 mm x 0.64 mm), and exhibits a saturated output power (Psat) of 24.45 dBm and a PAE of 29.1 % at 14 GHz.
引用
收藏
页码：349 / 351
页数：3
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