Ferromagnetism in Ni doped ZnS thin films: Effects of Ni concentration and swift heavy ion irradiation

被引:18
|
作者
Patel, Shiv P. [1 ]
Pivin, J. C. [2 ]
Chandra, R. [3 ]
Kanjilal, D. [4 ]
Kumar, Lokendra [5 ]
机构
[1] Guru Ghasidas Vishwavidyalaya A Cent Univ, Dept Pure & Appl Phys, Bilaspur 495009, India
[2] CNRS, CSNSM, IN2P3, F-91405 Orsay, France
[3] Indian Inst Technol, Inst Instrumentat Ctr, Roorkee 247667, Uttar Pradesh, India
[4] Inter Univ Accelerator Ctr, New Delhi 110067, India
[5] Univ Allahabad, Dept Phys, Allahabad 211002, Uttar Pradesh, India
关键词
Ferromagnetism; Ion irradiation; Impurities in semiconductors; Exchange interaction; ROOM-TEMPERATURE FERROMAGNETISM; TRANSFORMATION; GROWTH; CO;
D O I
10.1016/j.vacuum.2014.10.010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The magnetic properties of Ni doped ZnS thin films fabricated at substrate temperature of 400 degrees C by means of pulsed laser deposition are presented. The films show crystalline wurtzite structure. Optical absorption and transmission electron microscopic studies indicate that Ni has been appropriately substituted on Zn tetrahedral site. The films show ferromagnetism up to room temperature. The magnetization in the films decreases with increase of Ni concentration. Swift heavy ion (SHI) irradiations have been carried out using 120 MeV Ag ions for the modification of structural and magnetic properties of the films. SHI irradiation suggests the formation columnar ion track inside the films causing decrease in magnetization. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:150 / 156
页数:7
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