A manufacturable 0.35 μm 150 GHz fTSiGe:C bipolar RF technology

被引：11

作者：

Schwerd, M ^{[1
]}

Seck, M ^{[1
]}

Huttner, T ^{[1
]}

Böttner, T ^{[1
]}

Drexl, S ^{[1
]}

机构：

[1] INFINEON Technol AG, D-81739 Munich, Germany

来源：

2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2003年

关键词：

high performance; SiGe; bipolar; RF technology;

D O I：

10.1109/SMIC.2003.1196656

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intensive world wide development work in high-speed bipolar RF technologies leads to a rapid increase in transistor performance. This paper describes a manufacturable leading-edge 0.35 mum bipolar SiGe:C technology offering balanced transistor parameter sets with more than 150 GHz f(T) and 180 GHz f(max) as well as further integrated active and passive devices to serve a broad spectrum of applications.

引用

页码：10 / 13

页数：4

共 8 条

[1] A 3.3-V 11.3 GHz LC oscillator in 0.35-μm BiCMOS technology
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[3] A D-Band Transceiver Front-End for Broadband Applications in a 0.35μm SiGe Bipolar Technology
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[4] A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35μm SiGe HBT technology
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[5] Design of a 4.2-5.4 GHz differential LC VCO using 0.35 μm SiGeBiCMOS technology for IEEE 802.11a applications
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[6] An 0.3-μm Si epitaxial base BiCMOS technology with 37-GHz fmax and 10-V BVceo for RF telecommunication
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[7] DC-12-GHz 10-dB gain shunt-series shunt-shunt wideband amplifiers by commercially available 0.35 μM SiGe HBT technology
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MICROELECTRONICS JOURNAL, 2006, 37 (11) : 1194 - 1199

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