Determination of the carrier concentration in CdSe crystals from the effective infrared absorption coefficient measured by means of the photothermal infrared radiometry

被引：7
作者：
Pawlak, M. [1 ]
机构：
[1] Nicolaus Copernicus Univ, Inst Phys, Fac Phys Astron & Informat, PL-87100 Torun, Poland
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2015年 / 118卷 / 01期
关键词：
CDMGSE MIXED-CRYSTALS;
D O I：
10.1007/s00339-014-8860-y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, a non-contact method that allows to determine the carrier concentration in CdSe crystals is presented. The method relies on the measurement of the effective infrared absorption coefficient by means of the photothermal infrared radiometry (PTR). In order to obtain the effective infrared absorption coefficient and thermal diffusivity, the frequency characteristics of the PTR signal were analyzed in the frame of a one-dimensional heat transport model for infrared semitransparent crystals. The carrier concentrations were estimated using a theory introduced by Ruda and a recently proposed normalization procedure for the PTR signal. The deduced carrier concentrations of the investigated CdSe crystals are in reasonable agreement with those obtained using Hall measurements and infrared spectroscopy. The method presented in this paper can also be applied to other semiconductors with the carrier concentration in the range of 10(14)-10(17) cm(-3).
引用
收藏
页码：173 / 176
页数：4
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