Growth and characterization of N-polar InGaN/GaN multiquantum wells

被引：122
作者：
Keller, S. [1 ]
Fichtenbaum, N. A.
Furukawa, M.
Speck, J. S.
DenBaars, S. P.
Mishra, U. K.
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 19期
关键词：
D O I：
10.1063/1.2738381
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The properties of N-polar InGaN/GaN multiquantum wells (MQWs) grown by metal-organic chemical vapor deposition were investigated. Samples grown under optimized conditions exhibited distinct quantum well related emission, smooth surfaces, and abrupt interfaces as evaluated by room temperature photoluminescence, atomic force microscopy, and x-ray diffraction. Enhanced incorporation of indium into N-polar compared to Ga-polar MQW samples was observed for MQWs simultaneously deposited onto the (0001) and (000(1) over bar) GaN-on-sapphire base layers using trimethylindium-to-trimethylgallium-flow-ratios larger than 1.2 during growth. Necessary adjustments of the growth procedure for N polar in comparison with Ga-polar MQWs are described. (C) 2007 American Institute of Physics.
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