Coexistence of Ferroelectricity and Ferromagnetism in One-Dimensional SbN and BiN Nanowires

被引：25

作者：

Yang, Chao ^{[1
]}

Chen, Miaogen ^{[1
,9
]}

Li, Si ^{[2
,3
,4
]}

Zhang, Xuanlin ^{[1
]}

Hua, Chenqiang ^{[5
]}

Bai, Hua ^{[5
]}

Xiao, Chengcheng ^{[6
,7
,8
]}

Yang, Shengyuan A. ^{[4
]}

He, Pimo ^{[5
]}

Xu, Zhu-an ^{[5
]}

Lu, Yunhao ^{[1
,5
]}

机构：

[1] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China

[2] Hunan Normal Univ, Key Lab Low Dimens Quantum Struct & Quantum Contr, Minist Educ, Dept Phys, Changsha 410081, Peoples R China

[3] Hunan Normal Univ, Synerget Innovat Ctr Quantum Effects & Applicat, Changsha 410081, Peoples R China

[4] Singapore Univ Technol & Design, Res Lab Quantum Mat, Singapore 487372, Singapore

[5] Zhejiang Univ, Dept Phys, Zhejiang Prov Key Lab Quantum Technol & Device, Hangzhou 310027, Peoples R China

[6] Imperial Coll London, Dept Mat, London SW7 2AZ, England

[7] Imperial Coll London, Dept Phys, London SW7 2AZ, England

[8] Imperial Coll London, Thomas Young Ctr Theory & Simulat Mat, London SW7 2AZ, England

[9] China Jiliang Univ, Dept Phys, Key Lab Intelligent Mfg Qual Big Data Tracing & A, Hangzhou 310018, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2021年 / 13卷 / 11期

基金：

中国国家自然科学基金;

关键词：

one-dimensional; semiconductor; ferroelectricity; polarization; ferromagnetism; CRYSTAL STABILITY; PEROVSKITE; INPLANE; POINTS;

D O I：

10.1021/acsami.0c20570

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ferroelectricity exists in a variety of three- and two-dimensional materials and is of great significance for the development of electronic devices. However, the presence of ferroelectricity in one-dimensional materials is extremely rare. Here, we predict ferroelectricity in one-dimensional SbN and BiN nanowires. Their polarization strengths are 1 order of magnitude higher than ever reported values in one-dimensional structures. Moreover, we find that spontaneous spin polarization can be generated in SbN and BiN nanowires by moderate hole doping. This is the first time the coexistence of both ferroelectricity and ferromagnetism in a one-dimensional system has been reported. Our finding not only broadens the family of one-dimensional ferroelectric materials but also offers a promising platform for novel electronic and spintronic applications.

引用

页码：13517 / 13523

页数：7

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