CoSb3 based thermoelectric elements pre-requisite for device fabrication

被引：10

作者：

Bhardwaj, Ruchi ^{[1
,2
]}

Verma, Ajay Kumar ^{[1
,2
]}

Johari, Kishor Kumar ^{[1
,2
]}

Chauhan, Nagendra S. ^{[3
]}

Bathula, Sivaiah ^{[1
,2
,4
]}

Dhakate, S. R. ^{[1
,2
]}

Dhar, Ajay ^{[2
]}

Gahtori, Bhasker ^{[1
,2
]}

机构：

[1] CSIR, Natl Phys Lab, Dr KS Krishnan Marg, New Delhi 110012, India

[2] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India

[3] Indian Inst Technol, Dept Mat Sci & Engn, Kanpur 208016, Uttar Pradesh, India

[4] IIT Bhubaneswar, Sch Minerals Met & Mat Engn, Bhubaneswar 752050, India

来源：

SOLID STATE SCIENCES | 2022年 / 129卷

关键词：

TE Elements; Device; Mini-PEM; Skutterudites; CoSb; 3; ZT; Doping; HALF-HEUSLER; PERFORMANCE; SKUTTERUDITES; ENHANCEMENT; NANOCOMPOSITES; UNICOUPLES; GENERATORS; EFFICIENCY; TELLURIDE; CONTACT;

D O I：

10.1016/j.solidstatesciences.2022.106900

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Conversion of waste heat into useful electrical energy employing thermoelectric (TE) technology can improve power generation. However, the synthesis of efficient TE elements is critically challenging in the fabrication of the TE device. In this work, p- and n-type TE elements (single leg) were synthesized by using CoSb3 skutterudites based optimized compositions (Fe(0.2)5Co(0.75)Sb(2.965)Se(0.03)5 and Ni0.07Co0.93Sb2.94Te0.06, respectively), and CoSi2 has been used as a contact material. The synthesis route of the TE elements is a combination of arc melting and spark plasma sintering, which is a short and cost-effective approach. Synthesized TE elements were characterized for the device performance parameters at different temperature gradients (Delta T), employing a TE conversion efficiency evaluation system (Mini-PEM). The maximum current -1.9 A and -1.4 A has been drawn, while the maximum output voltage -9.8 mV and -19 mV was attained by the p- and n-type TE elements, respectively. Finally, the output power has been evaluated, which was found to be -5.26 mW at Delta T- 471 degrees C for p-type TE element, and -6.79 mW at Delta T- 465 degrees C for n-type TE element.

引用

页数：8

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