Growth mode evolution during (100)-oriented β-Ga2O3 homoepitaxy

被引：18

作者：

Cheng, Zongzhe ^{[1
]}

Hanke, Michael ^{[1
]}

Galazka, Zbigniew ^{[2
]}

Trampert, Achim ^{[1
]}

机构：

[1] Leibniz Inst Forsch Verbund Berlin eV, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany

[2] Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin, Germany

来源：

NANOTECHNOLOGY | 2018年 / 29卷 / 39期

关键词：

MBE; gallium oxide; RHEED; growth mode; in situ; MOLECULAR-BEAM EPITAXY; ENERGY ELECTRON-DIFFRACTION; SINGLE-CRYSTALS; THIN-FILMS; LAYERS; MORPHOLOGY; MOVPE; GE;

D O I：

10.1088/1361-6528/aad21b

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work focuses on homoepitaxial growth of beta-Ga2O3 on (100)-oriented substrates during molecular beam epitaxy. It provides a comprehensive study on the growth mode by combining in situ with ex situ tools. In situ reflection high-energy electron diffraction (RHEED) indicates 2D layer-by-layer mode accompanied by (1 x 1) surface reconstruction. The homoepitaxial layers are grown pseudomorphic with the substrate without in-plane strain as probed by in-plane azimuthal RHEED and out-of-plane synchrotron-based high resolution x-ray diffraction. In contrast to the substrate, stacking faults and twin domains are present in the layer.

引用

页数：6

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