Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

被引：79
作者：
Hamaya, K.
Masubuchi, S.
Kawamura, M.
Machida, T.
Jung, M.
Shibata, K.
Hirakawa, K.
Taniyama, T.
Ishida, S.
Arakawa, Y.
机构：
[1] Univ Tokyo, Inst Ind Sci, Dept Fundamental Engn, Meguro Ku, Tokyo 1538505, Japan
[2] Univ Tokyo, Inst Ind Sci, Dept Elect & Informat, Meguro Ku, Tokyo 1538505, Japan
[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[4] Univ Tokyo, Inst Ind Sci, Nanoelect Collaborat Res Ctr, Meguro Ku, Tokyo 1538505, Japan
[5] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538505, Japan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 05期
基金：
日本学术振兴会;
关键词：
D O I：
10.1063/1.2435957
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.
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页数：3
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