Deposition and optical studies of silicon carbide nitride thin films

被引：87

作者：

Sundaram, KB ^{[1
]}

Alizadeh, J ^{[1
]}

机构：

[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Orlando, FL 32816 USA

来源：

THIN SOLID FILMS | 2000年 / 370卷 / 1-2期

关键词：

deposition process; infrared spectroscopy; optical properties; silicon carbide;

D O I：

10.1016/S0040-6090(00)00956-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of silicon carbide nitride (SiCN) have been prepared by reactive radioactive frequency (r.f.) sputtering using SiC target and nitrogen as the reactant gas. Deposition rates are studied as a function of deposition pressures and argon-nitrogen flow ratios. The optical absorption studies indicated the band edge shifting of the films when the nitrogen ratios are increased during deposition. Fourier transform infrared spectroscopy (FTIR) analysis on the films indicated several stretching modes corresponding to SiC, SiN and CN compositions. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：151 / 154

页数：4

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