Nanoscale molecular-switch devices fabricated by imprint lithography

被引：213

作者：

Chen, Y

Ohlberg, DAA

Li, XM

Stewart, DR

Williams, RS

Jeppesen, JO

Nielsen, KA

Stoddart, JF

Olynick, DL

Anderson, E

机构：

[1] Hewlett Packard Labs, Quantum Sci Res, Palo Alto, CA 94304 USA

[2] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA

[3] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 10期

关键词：

Atomic force microscopy - Current voltage characteristics - Electron beam lithography - Electronic equipment - Ellipsometry - Logic circuits - Molecular weight - Monolayers - Polymethyl methacrylates - Reactive ion etching - Scanning electron microscopy;

D O I：

10.1063/1.1559439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanoscale molecular-electronic devices comprising a single molecular monolayer of bistable [2]rotaxanes sandwiched between two 40-nm metal electrodes were fabricated using imprint lithography. Bistable current-voltage characteristics with high on-off ratios and reversible switching properties were observed. Such devices may function as basic elements for future ultradense electronic circuitry. (C) 2003 American Institute of Physics.

引用

页码：1610 / 1612

页数：3

共 11 条

[1] Large on-off ratios and negative differential resistance in a molecular electronic device [J].