Diluted magnetic III-V semiconductors

被引：23
|
作者：
Twardowski, A [1 ]
机构：
[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
来源：
ACTA PHYSICA POLONICA A | 2000年 / 98卷 / 03期
关键词：
D O I：
10.12693/APhysPolA.98.203
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
During recent years diluted magnetic semiconductors based on III-V compounds have been of considerable interest. In this respect we review the basic properties of these materials, which are nearly exclusively Mn-based systems, such as GaMnAs, InMnAs, GaMnSb, and GaN:Mn. We discuss the nature of Mn impurity. Different Mn centers are considered and experimental pieces of evidence suggesting the dominating role of Mn (d(5)) configuration are given. Then we analyze s, p-d exchange, together with resulting magnetooptical properties tin particular absorption edge slitting for heavily p-type GaMnAs). The coupling between Mn ions (d-d exchange) and ferromagnetic ordering observed in InMnAs and GaMnAs is the next subject. Some mechanisms responsible for this ordering ale presented. Finally we discuss transport properties and some selected problems of quantum structures based on III-V diluted magnetic semiconductors.
引用
收藏
页码：203 / 216
页数：14
相关论文
共 50 条
  • [21] MAGNETOTRANSPORT PROPERTIES OF P-TYPE (IN,MN)AS DILUTED MAGNETIC III-V SEMICONDUCTORS
    OHNO, H
    MUNEKATA, H
    PENNEY, T
    VONMOLNAR, S
    CHANG, LL
    PHYSICAL REVIEW LETTERS, 1992, 68 (17) : 2664 - 2667
  • [22] Electronic structure of superlattices of II-VI/III-V diluted magnetic semiconductors
    Kamatani, T
    Akai, H
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 10 (1-3) : 157 - 160
  • [23] Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors
    Katsumoto, S
    Hayashi, T
    Hashimoto, Y
    Iye, Y
    Ishiwata, Y
    Watanabe, M
    Eguchi, R
    Takeuchi, T
    Harada, Y
    Shin, S
    Hirakawa, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 84 (1-2): : 88 - 95
  • [24] Spin waves in disordered III-V diluted magnetic semiconductors by a modified RPA approach
    Berciu, M
    Bhatt, RN
    PHYSICAL REVIEW B, 2002, 66 (08) : 852071 - 8520713
  • [25] Metal-insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors
    Iye, Y
    Oiwa, A
    Endo, A
    Katsumoto, S
    Matsukura, F
    Shen, A
    Ohno, H
    Munekata, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 63 (1-2): : 88 - 95
  • [26] DILUTED MAGNETIC III-V SEMICONDUCTOR STRUCTURES
    MUNEKATA, H
    PENNEY, T
    CHANG, LL
    SURFACE SCIENCE, 1992, 267 (1-3) : 342 - 348
  • [27] Curie temperatures of III-V diluted magnetic semiconductors calculated from first principles
    Sato, K
    Dederics, PH
    Katayama-Yoshida, H
    EUROPHYSICS LETTERS, 2003, 61 (03): : 403 - 408
  • [28] Metal-insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors
    Iye, Y.
    Oiwa, A.
    Endo, A.
    Katsumoto, S.
    Matsukura, F.
    Shen, A.
    Ohno, H.
    Munekata, H.
    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 1999, 63 (01): : 88 - 95
  • [29] (GaMn)As: GaAs based III-V diluted magnetic semiconductors grown by molecular beam epitaxy
    Univ of Tokyo, Tokyo, Japan
    J Cryst Growth, pt 2 (1063-1068):
  • [30] MAGNETIC IONS IN SOME III-V SEMICONDUCTORS
    MATYAS, M
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1984, 34 (05) : 445 - 446
12345