A highly efficient 1.9-GHz Si high-power MOS amplifier

被引：31

作者：

Yoshida, I ^{[1
]}

Katsueda, M ^{[1
]}

Maruyama, Y ^{[1
]}

Kohjiro, I ^{[1
]}

机构：

[1] Hitachi Ltd, Semicond & Integrated Circuits Div, Tokyo 185, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 04期

关键词：

Al-shorted metal-silicide/Si gate; amplifier; cellular; PCS; power MOSFET; Si;

D O I：

10.1109/16.662810

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1.9-GHz Si power MOSFET with 50% power-added efficiency and 0.3-1.0 W output power at a 3-5 V supply voltage has been developed for use as a high-power amplifier in cellular telephones, This MOSFET achieves high efficiency and high-power gain at low supply voltage by using a 0.5-mu m gate power MOSFET with an Al-shorted metal-silicide/Si gate structure, which improves the cut-off frequency and reduces the on-state resistance.

引用

页码：953 / 956

页数：4