Structure and Microwave Dielectric Properties of Ultralow-Temperature Cofirable BaV2O6 Ceramics

A new ultralow-temperature-sinterable BaV2O6 ceramic was prepared through a conventional solid-state ceramic method. Thermogravimetric and differential-scanning-calorimetry analyses were performed to confirm the phase formation of BaV2O6. Phase purity and crystal structure of the ceramic material were studied by using X-ray diffraction analysis and Raman spectroscopic studies. BaV2O6 crystallizes in an orthorhombic unit cell, and the calculated lattice parameters are a = 8.532 angstrom, b = 12.583 angstrom, and c = 7.554 angstrom. BaV2O6 ceramic was well sintered at 550 degrees C for 1 h and exhibited a dense microstructure with excellent microwave properties, for example, a dielectric constant of 11.2, a Qxf value of 42790 GHz, and a temperature coefficient of resonant frequency of 28.2 ppm/degrees C. The BaV2O6 ceramic exhibits a linear coefficient of thermal expansion of 10 ppm/degrees C in the range 30-350 degrees C. The BaV2O6 ceramic shows good chemical compatibility with Al electrodes, which makes it as a suitable candidate material for ULTCC technology.