Microchip laser for microwave and millimeter-wave generation

被引：0
作者：
Vieira, AJ [1 ]
Herczfeld, PR [1 ]
Contarino, VM [1 ]
机构：
[1] Drexel Univ, Ctr Microwave & Lightwave Engn, Philadelphia, PA 19104 USA
来源：
1997 SBMO/IEEE MTTS-S - INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 AND 2 | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Nd:LiNbO3 microchip laser operating at 1.084 mu m wavelength was designed, implemented, and characterized. The laser cavity was designed to have a free spectral range (FSR) of 20GHz and an output optical power greater than 20mW. By exploiting the electrooptical properties of the Lithium Niobate host, it was possible to mode-lock the microchip laser at 20 and 40GHz. With this technique it was possible to optically generate the subcarrier with a high modulation index (95.6%).
引用
收藏
页码：333 / 337
页数：5
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