Thermal conductivity of unidirectionally oriented Si3N4w/Si3N4 composites

被引:27
作者
Lee, SW [1 ]
Chae, HB
Park, DS
Choa, YH
Niihara, K
Hockey, BJ
机构
[1] Sun Moon Univ, Dept Mat Engn, Asan 336840, South Korea
[2] Sunchunhyang Univ, Dept Phys, Asan 336840, South Korea
[3] Korea Inst Machinery & Mat, Changwon 641010, South Korea
[4] Osaka Univ, ISIR, Osaka 5670047, Japan
[5] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
关键词
D O I
10.1023/A:1004807516791
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
beta-silicon nitride whiskers were aligned unidirectionally in silicon nitride sintered with 2 wt% Al2O3 and 6 wt% Y2O3. It was be densified by the Gas Pressure Sintering (GPS) method. Thermal conductivity of the sintered body with different amount of beta- silicon nitride whiskers was measured by the direct contact method from 298 K to 373 K. This unidirectionally oriented beta-silicon nitride whiskers grew into the large elongated grains, and improved also the thermal conductivity. The amount of beta-silicon nitride whiskers changed the microstrcuture, which changed the thermal conductivity. (C) 2000 Kluwer Academic Publishers.
引用
收藏
页码:4487 / 4493
页数:7
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