Correlation Between TDDB and VRDB for Low-k Dielectrics With Square Root E Model

被引：6
|
作者：
Lin, Mingte [1 ]
Su, K. C. [1 ]
机构：
[1] United Microelect Corp, Hsinchu 300, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 05期
关键词：
Dielectrics; low-k; time-dependent dielectric breakdown (TDDB); voltage ramp dielectric breakdown (VRDB);
D O I：
10.1109/LED.2010.2044554
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A concise relation between voltage ramp dielectric breakdown (VRDB) and time-dependent dielectric breakdown (TDDB) based on the square-root (SQRT) E model for low-k dielectric-reliability evaluation was established. VRDB and TDDB experiments on low-k dielectrics in Cu interconnects were conducted and showed a very well correlation by this relation. The electric field acceleration parameter of the SQRT E model can be estimated with the dual ramping rate VRDB test. The characteristic of the statistic distribution of VRDB is shown to relate to that of TDDB.
引用
收藏
页码：494 / 496
页数：3
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