Bandgap engineering of α-(AlxGa1-x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law

被引：80
作者：
Dang, G. T. [1 ]
Yasuoka, T. [2 ]
Tagashira, Y. [2 ]
Tadokoro, T. [3 ]
Theiss, W. [4 ]
Kawaharamura, T. [1 ,2 ]
机构：
[1] Kochi Univ Technol, Ctr Nanotechnol, Res Inst, 185 Miyanokuchi, Kami, Kochi 7828502, Japan
[2] Kochi Univ Technol, Sch Syst Engn, 185 Miyanokuchi, Kami, Kochi 7828502, Japan
[3] Technosynergy Inc, 2-46-16 Sanda Machi, Hachioui, Tokyo 1930832, Japan
[4] WTheiss Hardware & Software, 11875 E Elin Ranch Rd, Tucson, AZ 85749 USA
来源：
APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 06期
基金：
日本学术振兴会; 奥地利科学基金会;
关键词：
THIN-FILMS; GROWTH; HETEROSTRUCTURES; SEMICONDUCTOR;
D O I：
10.1063/1.5037678
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This work reports growth of alpha-(AlxGa1-x)(2)O-3 single crystals with high incorporation of Al by a Mist Chemical Vapor Deposition two-chamber system, which was rationally designed to avoid side-reactions between different precursors during solution preparation for multi-component thin film growth. Multiple acceleration voltages were used in Energy Dispersive X-ray measurements to reliably obtain the Al composition x of the films. As a result, Vegard's law for lattice constants was verified and found to be valid in the alpha-(AlxGa1-x)(2)O-3 system. However, Vegard's law for optical bandgaps, derived from different models, required an additional term to account for the bowing effect. At x = 0.71, the gaps were 7.74, 7.03, 7.26, and 7.34 eV as derived from the Tauc plots for the direct bandgap, indirect bandgap, Tauc-Lorentz model, and O'Leary-Johnson-Lim model, respectively. The two-chamber system provides reliable and effective control of the Al content in alpha-(AlxGa1-x)(2)O-3 alloys and heterostructures. Published by AIP Publishing.
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页数：5
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