Bandgap engineering of α-(AlxGa1-x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law

被引：80

作者：

Dang, G. T. ^{[1
]}

Yasuoka, T. ^{[2
]}

Tagashira, Y. ^{[2
]}

Tadokoro, T. ^{[3
]}

Theiss, W. ^{[4
]}

Kawaharamura, T. ^{[1
,2
]}

机构：

[1] Kochi Univ Technol, Ctr Nanotechnol, Res Inst, 185 Miyanokuchi, Kami, Kochi 7828502, Japan

[2] Kochi Univ Technol, Sch Syst Engn, 185 Miyanokuchi, Kami, Kochi 7828502, Japan

[3] Technosynergy Inc, 2-46-16 Sanda Machi, Hachioui, Tokyo 1930832, Japan

[4] WTheiss Hardware & Software, 11875 E Elin Ranch Rd, Tucson, AZ 85749 USA

来源：

APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 06期

基金：

日本学术振兴会; 奥地利科学基金会;

关键词：

THIN-FILMS; GROWTH; HETEROSTRUCTURES; SEMICONDUCTOR;

D O I：

10.1063/1.5037678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work reports growth of alpha-(AlxGa1-x)(2)O-3 single crystals with high incorporation of Al by a Mist Chemical Vapor Deposition two-chamber system, which was rationally designed to avoid side-reactions between different precursors during solution preparation for multi-component thin film growth. Multiple acceleration voltages were used in Energy Dispersive X-ray measurements to reliably obtain the Al composition x of the films. As a result, Vegard's law for lattice constants was verified and found to be valid in the alpha-(AlxGa1-x)(2)O-3 system. However, Vegard's law for optical bandgaps, derived from different models, required an additional term to account for the bowing effect. At x = 0.71, the gaps were 7.74, 7.03, 7.26, and 7.34 eV as derived from the Tauc plots for the direct bandgap, indirect bandgap, Tauc-Lorentz model, and O'Leary-Johnson-Lim model, respectively. The two-chamber system provides reliable and effective control of the Al content in alpha-(AlxGa1-x)(2)O-3 alloys and heterostructures. Published by AIP Publishing.

引用

页数：5

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